In nearly ten years, 2D transition metal dichalcogenides have got considerable attention, because of their potential in device application. Those materials can largely eliminate transport barriers to promise significantly improved electronic properties. Moreover, unlike silicon basic device, the 2D material device still presents high mobility even if when the thickness is down to monolayer. However, the high contact resistance is the main challenge for using 2D material in the field-effect transistor. In our group, we focus on improving mobility and decreasing the contact resistance between TMDs and metal.
